This midterm examination comprises of two parts:

Part I is a set of questions that must be completed within a period of 45 minutes. It is open book, open notes, but you must not discuss or collaborate on the solution with anybody in the class or outside the class. This part is due the week after the date is handed out.

Part II is a design problem for a fabrication schedule of one out of three devices described in the paper references below. You can collaborate in groups of two or three to design the process, giving the steps, temperatures, time, solutions and materials required for the design. A class presentation of your design will be given the weeks of November 19^th and December 3^rd . You must have a writeup for you design by November 19^th.

A 100 nm gate oxide is required for some technology. It has been decided that the oxidation will be carried at 1000^o C in dry oxygen. If there is no initial oxide on the surface of the silicon wafer, for how long should the oxidation be done? Is the oxidation in the linear regime, parabolic or in between the two?

A 30 keV implant of B¹¹ is done into bare silicon. The dose is 10¹² cm^-2 (a) What is the depth of the peak of the implanted profile (b) What is the concentration at that depth (c) What is the concentration at a depth of 0.3 microns (d) The measured concentration is found to be an order of magnitude larger than what predicted by the theory in (c) although the profile number in (a) and (b) agree. Give a possible explanation assuming that the measured values are correct.